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Photons at microwave and optical frequencies are principal carriers for quantum information. While microwave photons can be effectively controlled at the local circuit level, optical photons can propagate over long distances. High-fidelity conversion between microwave and optical photons will allow the distribution of quantum states across different quantum technology nodes and enhance the scalability of hybrid quantum systems toward a future “Quantum Internet.” Despite a frequency difference of five orders of magnitude, there has been significant progress recently toward the transfer between microwave and optical photons with steadily improved efficiency in a coherent and bidirectional manner. In this review, we summarize this progress, emphasizing integrated device approaches, and provide a perspective for device implementation that enables quantum state transfer and entanglement distribution across microwave and optical domains. 

We report intracavity Bragg scattering induced by the photorefractive (PR) effect in high- $Q$lithium niobate ring resonators at cryogenic temperatures. We show that when a cavity mode is strongly excited, the PR effect imprints a long-lived periodic space-charge field. This residual field in turn creates a refractive index modulation pattern that dramatically enhances the back scattering of an incoming probe light, and results in selective and reconfigurable mode splittings. This PR-induced Bragg scattering effect, despite being undesired for many applications, could be utilized to enable optically programmable photonic components. 

Thin-film lithium niobate is an attractive integrated photonics platform due to its low optical loss and favorable optical nonlinear and electro-optic properties. However, in applications such as second harmonic generation, frequency comb generation, and microwave-to-optics conversion, the device performance is strongly impeded by the photorefractive effect inherent in thin-film lithium niobate. In this paper, we show that the dielectric cladding on a lithium niobate microring resonator has a significant influence on the photorefractive effect. By removing the dielectric cladding layer, the photorefractive effect in lithium niobate ring resonators can be effectively mitigated. Our work presents a reliable approach to control the photorefractive effect on thin-film lithium niobate and will further advance the performance of integrated classical and quantum photonic devices based on thin-film lithium niobate. 

Materials with strong second-order ( ${\mathrm{\chi <\#comment/>}}^{\left(2\right)}$) optical nonlinearity, especially lithium niobate, play a critical role in building optical parametric oscillators (OPOs). However, chip-scale integration of low-loss ${\mathrm{\chi <\#comment/>}}^{\left(2\right)}$materials remains challenging and limits the threshold power of on-chip ${\mathrm{\chi <\#comment/>}}^{\left(2\right)}$OPO. Here we report an on-chip lithium niobate optical parametric oscillator at the telecom wavelengths using a quasi-phase-matched, high-quality microring resonator, whose threshold power ( $\sim <\#comment/>30\text{µ<\#comment/>}\mathrm{W}$) is 400 times lower than that in previous ${\mathrm{\chi <\#comment/>}}^{\left(2\right)}$integrated photonics platforms. An on-chip power conversion efficiency of 11% is obtained from pump to signal and idler fields at a pump power of 93 µW. The OPO wavelength tuning is achieved by varying the pump frequency and chip temperature. With the lowest power threshold among all on-chip OPOs demonstrated so far, as well as advantages including high conversion efficiency, flexibility in quasi-phase-matching, and device scalability, the thin-film lithium niobate OPO opens new opportunities for chip-based tunable classical and quantum light sources and provides a potential platform for realizing photonic neural networks. 

Here, we report ${\mathrm{\chi <\#comment/>}}^{\left(3\right)}$-based optical parametric oscillation (OPO) with widely separated signal–idler frequencies from crystalline aluminum nitride microrings pumped at $2\text{µ<\#comment/>}\mathrm{m}$. By tailoring the width of the microring, OPO reaching toward the telecom and mid-infrared bands with a frequency separation of 64.2 THz is achieved. While dispersion engineering through changing the microring width is capable of shifting the OPO sideband by $><\#comment/>9\mathrm{T}\mathrm{H}\mathrm{z}$, the OPO frequency can also be agilely tuned in the ranges of 1 and 0.1 THz, respectively, by shifting the pump wavelength and controlling the chip’s temperature. At high pump powers, the OPO sidebands further evolve into localized frequency comb lines. Such large-frequency-shift OPO with flexible wavelength tunability will lead to enhanced chip-scale light sources. 

Integrating patterned, low-loss magnetic materials into microwave devices and circuits presents many challenges due to the specific conditions that are required to grow ferrite materials, driving the need for flip-chip and other indirect fabrication techniques. The low-loss (α = (3.98 ± 0.22) × 10−5), room-temperature ferrimagnetic coordination compound vanadium tetracyanoethylene (V[TCNE]x) is a promising new material for these applications that is potentially compatible with semiconductor processing. Here, we present the deposition, patterning, and characterization of V[TCNE]x thin films with lateral dimensions ranging from 1 μm to several millimeters. We employ electron-beam lithography and liftoff using an aluminum encapsulated poly(methyl methacrylate), poly(methyl methacrylate-methacrylic acid) copolymer bilayer [PMMA/P(MMA-MAA)] on sapphire and silicon. This process can be trivially extended to other common semiconductor substrates. Films patterned via this method maintain low-loss characteristics down to 25 μm with only a factor of 2 increase down to 5 μm. A rich structure of thickness and radially confined spin-wave modes reveals the quality of the patterned films. Further fitting, simulation, and analytic analysis provide an exchange stiffness, Aex = (2.2 ± 0.5) × 10−10erg/cm, as well as insights into the mode character and surface-spin pinning. Below a micron, the deposition is nonconformal, which leads to interesting and potentially useful changes in morphology. This work establishes the versatility of V[TCNE]x for applications requiring highly coherent magnetic excitations ranging from microwave communication to quantum information.